Failure rate calculation method for high power devices in space applications at low earth orbit

Authors

  • Erdenebaatar D Department of Physics, National University of Mongolia, Ulaanbaatar, Mongolia
  • Shohei H Department of Electrical Engineering and Electronics, Kyushu Institute of Technology
  • Yuji Sh Department of Electrical Engineering and Electronics, Kyushu Institute of Technology
  • Masaki S Department of Electrical Engineering and Electronics, Kyushu Institute of Technology
  • Ichiro O Department of Electrical Engineering and Electronics, Kyushu Institute of Technology

DOI:

https://doi.org/10.22353/physics.v25i478.229

Keywords:

high power semiconductor device

Abstract

In this paper we propose that calculation method to evaluate failure rate of high power semiconductor device against proton flux environment of low earth orbit. Advantage of this method is to expand to evaluate failure rate of any devices under various radiation environment. Possible suggestion to improve high power device reliability was discussed.

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Published

2022-02-25

How to Cite

D, E., H, S., Sh, . Y. ., S, M., & O, I. (2022). Failure rate calculation method for high power devices in space applications at low earth orbit. Scientific Transaction of the National University of Mongolia. Physics, 25(478), 174–179. https://doi.org/10.22353/physics.v25i478.229

Issue

Vol. 25 No. 478 (2017): Физик

Section

Research article

License

Copyright (c) 2022 Физик сэтгүүл

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.